GE IS200DAMAG1A – Advanced Insulator-Gate Bipolar Transistor, Mark VI Series

Model:IS200DAMAG1A

Brand:General Electric

Series:Mark VI

Function:Insulator-Gate Bipolar Transistor

Dimension (WxHxD):Width x Height x Depth (mm)

Weight:0.14 kg

Material:High-grade copper and epoxy resin

Operating Voltage:Rated voltage (V)

Current Capacity:Max current capacity (A)

Temperature Range:-40°C to +85°C

Certification:CE, UL

    The GE IS200DAMAG1A is a key component in the Mark VI series, designed to deliver exceptional performance in excitation control systems. Its advanced insulator-gate technology ensures precise voltage regulation and enhances system stability.

    Engineered for durability and reliability, this PCB is coated with a chemically applied protective layer to withstand harsh industrial environments. This prevents corrosion and ensures long-term operational integrity.

    Featuring a compact yet robust design, the IS200DAMAG1A integrates seamlessly with existing power system architectures, offering easy installation and integration. It supports a variety of capacitors, including four solid yellow ones arranged symmetrically, for enhanced functionality and flexibility.

    With its precise manufacturing standards, the IS200DAMAG1A is meticulously tested for compatibility with GE‘s EX2100 & EX2100e Excitation Control systems. This ensures optimal performance and seamless operation within these systems.

    Designed for professionals in the industrial automation and power generation sectors, the GE IS200DAMAG1A is an essential upgrade for enhancing system efficiency and reliability. Its compatibility with leading industry standards makes it a preferred choice among engineers and technicians.