GE FANUC VMIVME-5565-010: Advanced Reflective Memory Node Card

Model:VMIVME-5565-010

Manufacturer:GE-FANUC

Memory Type:Reflective

Node Capacity:Up to 4 nodes

Operating Temperature:-40°C to +85°C

Power Consumption:Less than 10W

Form Factor:VME Bus

Memory Speed:DDR3

Data Transfer Rate:Up to 800 MB/s

    This Reflective Memory Node Card from GE FANUC is engineered to provide superior reliability and efficiency in industrial control applications. Its compact 6U VME form factor makes it suitable for space-constrained environments, while its reflective memory architecture ensures robust data handling and quick access for enhanced system responsiveness.

    Equipped with up to 256 MB of storage capacity, the card can manage extensive data sets efficiently, making it ideal for high-performance control systems. Designed to operate within an impressive temperature range of -40°C to +85°C, this module ensures reliable functionality in a variety of industrial settings.

    The card’s 12V DC operating voltage and VME bus interface guarantee compatibility with a wide range of industrial control systems, facilitating seamless integration and easy setup. Its lightweight design and small size contribute to reduced installation and maintenance costs.

    Manufactured using high-quality materials, the GE FANUC VMIVME-5565-010 is built to withstand harsh industrial conditions, ensuring long-term durability and minimal downtime. This module is an excellent choice for industries requiring high-performance, reliable, and efficient control solutions.

    For optimal performance, we recommend pairing this Reflective Memory Node Card with compatible VME-based systems and utilizing the latest firmware updates provided by GE FANUC. Our technical support team is available to assist with any questions or customization needs, ensuring a smooth implementation process.